absolute maximum ratings parameter units i d @ v gs = -12v, t c = 25c continuous drain current -38 i d @ v gs = -12v, t c = 100c continuous drain current -24 i dm pulsed drain current ? -152 p d @ t c = 25c max. power dissipation 300 w linear derating factor 2.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 500 mj i ar avalanche current ? -38 a e ar repetitive avalanche energy ? 30 mj dv/dt peak diode recovery dv/dt ? -17 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg mounting surface temp. 300 (for 5s) weight 3.3(typical) g pd - 91433c pre-irradiation international rectifier?s radhard hexfet tm technol- ogy provides high performance power mosfets for space applications. this technology has over a de- cade of proven performance and reliability in satellite applications. these devices have been character- ized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters. o c a radiation hardened jansr2n7425u power mosfet 100v, p-channel surface mount (smd-2) ref: mil-prf-19500/655 rad hard ? hexfet ? t echnology 02/20/03 www.irf.com 1 smd-2 product summary part number radiation level r ds(on) i d qpl part number irhna9160 100k rads (si) 0.068 ? -38a jansr2n7425u irhna93160 300k rads (si) 0.068 ? -38a JANSF2N7425U features: single event effect (see) hardened low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight for footnotes refer to the last page irhna9160
irhna9160, jansr2n7425u pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -100 ? ? v v gs = 0v, i d =-1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.11 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.068 v gs = -12v, i d = -24a ? resistance ? ? 0.071 ? v gs = -12v, i d = -38a ? v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 15 ? ? s ( ) v ds >-15v, i ds = -24a ? i dss zero gate voltage drain current ? ? -25 v ds = -80v ,v gs =0v ? ? -250 v ds = -80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 290 v gs =-12v, i d = -38a q gs gate-to-source charge ? ? 72 nc v ds = -50v q gd gate-to-drain (?miller?) charge ? ? 90 t d (on) turn-on delay time ? ? 35 v dd = -50v, i d = -38a, t r rise time ? ? 170 v gs =-12v, r g = 2.35 ? t d (off) turn-off delay time ? ? 190 t f fall time ? ? 190 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 6000 ? v gs = 0v, v ds = -25v c oss output capacitance ? 1500 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 400 ? na ? nh ns a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 0.42 r thj-pcb junction-to-pc board ? 1.6 ? soldered to a 1?square copper-clad board c/w measured from the center of drain pad to center of source pad source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? -38 i sm pulse source current (body diode) ? ? ? -152 v sd diode forward voltage ? ? -3.3 v t j = 25c, i s = -38a, v gs = 0v ? t rr reverse recovery time ? ? 300 ns t j = 25c, i f = -38a, di/dt -100a/ s q rr reverse recovery charge ? ? 2.1 c v dd -50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page
www.irf.com 3 pre-irradiation irhna9160, jansr2n7425u table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300 k rads (si ) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -100 ? -100 ? v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward ? -100 ? -100 na v gs = -20v i gss gate-to-source leakage reverse ? 100 ? 100 v gs = 20 v i dss zero gate voltage drain current ? -25 ? -25 a v ds =-80v, v gs =0v r ds(on) static drain-to-source ? ? 0.069 ? 0.069 ? v gs = -12v, i d =-24a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 0.068 ? 0.068 ? v gs = -12v, i d =-24a on-state resistance (smd-2) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the t o-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number irhna9160 (jansr2n7425u) 2. part numbers irhna93160 (JANSF2N7425U) fig a. single event effect, safe operating area v sd diode forward voltage ? ? -3.3 ? - 3.3 v v gs = 0v, i s = -38a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. table 2. single event effect safe operating area for footnotes refer to the last page ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =5v @v gs =10v @v gs =15v @v gs =20v br 36.8 305 39 -100 -100 -70 -50 -40 i 59.8 343 32.6 -60 ? ? ? ? cu 28 285 43 -100 -100 -100 -70 -60 -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 vgs vds cu br i
fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 1 10 100 20 s pulse width t = 25 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 10 100 1000 1 10 100 20 s pulse width t = 150 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -38a 10 100 1000 5 6 7 8 9 10 11 v = -50v 20 s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j irhna9160, jansr2n7425u pre-irradiation
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 -v , drain-to-source voltage (v) c , c apac i tance ( p f) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 0.1 1 10 100 1000 0.0 1.0 2.0 3.0 4.0 -v ,source-to-drain volta g e (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds ( on ) single pulse t t = 150 c = 25 c j c -v , drain-to-source volta g e (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 0 50 100 150 200 250 300 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -38 a v = 20v ds v = 50v ds v = 80v ds pre-irradiation irhna9160, jansr2n7425u - - -
irhna9160, jansr2n7425u pre-irradiation 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 0 10 20 30 40 t , case temperature ( c) -i , drain current (a) c d 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v gs
www.irf.com 7 pre-irradiation irhna9160, jansr2n7425u fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v fig 13a. basic gate charge waveform q g q gs q gd v g charge -12v fig 13b. gate charge test circuit d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - -12v 25 50 75 100 125 150 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 17a 24a 38a v gs - - -
irhna9160, jansr2n7425u pre-irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. -80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = -25v, starting t j = 25c, l= 0.7mh peak i l = -38a, v gs = -12v ? i sd -38a, di/dt -385a/ s, v dd -100v, t j 150c foot notes: case outline and dimensions ? smd-2 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 02/03
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